Hands-on, cross-disciplinary role connecting device behavior, circuit design, electrical test, yield, process technology, and physical failure analysis. The role will include working with and developing expertise in ReRAM technology Drive fault isolation and root cause analysis of advanced semiconductor devices, with a focus on memory arrays and associated logic and peripheral circuitry. Lead fault isolation and root cause analysis of memory and logic failures, including electrical, test, and yield failures, from initial failure signature through physical confirmation Analyze failures at device, memory-cell, array, and circuit level, differentiating between design, test, device, process, and physical failure mechanisms Correlate electrical characterization, memory-test and yield results, schematics, layout, and physical FA findings to identify and validate root cause Develop and execute effective fault-isolation strategies, localizing failures down to the relevant cell, circuit, interconnect, or physical structure Work closely with Design, Device, Test/Product, Process, Reliability, and Physical FA labs to solve complex failures and drive corrective actions Improve FA methodologies, prepare and present engineering FA report on complex failure investigations Sc. or M.Sc. in Electrical Engineering, Physics, Materials Engineering, or a related technical field 5+ years of relevant experience in semiconductor failure analysis, fault isolation, silicon debug, memory characterization, product engineering, or a related field Strong experience in fault isolation and root cause analysis of semiconductor devices Ability to analyze electrical, test, and yield failure signatures and correlate them with schematics, layout, circuit behavior, and physical findings Strong analytical and problem-solving skills, with the ability to drive complex investigations across multiple engineering disciplines Nice to have: Understanding memory architecture and digital/analog circuitry Experience with non-volatile memory or advanced memory technologies such as Flash, MRAM, PCM, ReRAM, or similar technologies Experience with memory tests, ATE, electrical characterization, yield analysis, and memory fault analysis Familiarity with advanced fault-isolation and physical FA techniques, such as EMMI, OBIRCH, LIVA/TIVA, laser-based techniques, nanoprobing, SEM, FIB, or TEM